8
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
f
MHz
Zsource
Ω
Zload
Ω
800
820
840
3.1 + j1.9
2.7 + j2.2
2.8 + j1.7
10.1 + j2.3
8.3 + j2.5
8.2 + j3.3
VDD
= 28 Vdc, I
DQ
= 125 mA, P
out
= 10 W PEP
860
880
900
3.1 + j3.4
2.9 + j3.7
3.3 + j3.8
9.8 + j4.8
10.6 + j5.6
9.5 + j5.5
920
940
960
2.8 + j4.4
3.2 + j4.9
3.0 + j4.7
10.1 + j5.9
11.0 + j6.4
11.8 + j6.6
980 3.6 + j5.2 12.1 + j7.1
Figure 13. Series Equivalent Source and Load Impedance
? 900 MHz
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 800 MHz
f = 980 MHz
Zo
= 25
Ω
f = 800 MHz
f = 980 MHz
Zload
Zsource
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相关代理商/技术参数
MW6S010GNR1-CUT TAPE
制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET
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功能描述:MOSFET RF N-CH 28V 10W TO-270-2 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MW6S-12A
制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H
MW6S-12P
制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H
MW6S-5P
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制造商:Datak Corporation 功能描述: